2004 Feb 03 2 NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 FEATURES •Collector current capability IC = 200 mA •Collector-emitter voltage VCEO = 40 V. Low Noise, Precision Operational Amplifier Data Sheet OP27 Rev. H Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. The content and copyrights of the attached material are the property of its owner. Distributed by: www.Jameco.com 1-800-831-4242. Jameco Part Number 17209 F O R WA R D S U R G E C U R R E N T (A) FSM NUMBER OF CYCLES AT 60 Hz Fig. 7 Maximum Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Notes: 5.

2004 Feb 03 2 NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 FEATURES •Collector current capability IC = 200 mA •Collector-emitter voltage VCEO = 40 V. B130LAW-7-F from Diodes Inc at Allied Electronics & Automation. * Products listed as "People Also Bought" are not recommended accessories and may not be compatible with the primary product. Request Diodes Zetex MMSZ5243BS-7-F: DIODE ZENER 13V 200MW SOD-323 online from Elcodis, view and download MMSZ5243BS-7-F pdf datasheet, Diodes - Zener - Single specifications. DS30308 Rev. 7 - 21 of 4B130LAWwww.diodes.comã Diodes IncorporatedFeaturesB130LAW1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERMaximum [email protected] TA = 25°C unless otherwise specified datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors.

Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a ... • 4 (MCP3004) or 8 (MCP3008) input channels • Analog inputs programmable as single-ended or pseudo-differential pairs • On-chip sample and hold

ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current -7.0 A IDM @TC = 25°C Pulsed Drain Current -44 PD @TC = 25°C Maximum Power Dissipation 75 W Linear Derating Factor 0.60 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 207 mJ IAR Avalanche Current -11 A SS8550 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Electrical Characteristics Ta=25°C unless otherwise noted hFEClassification Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1.5 A Here is the measured relationship for the above 2N3904: The characteristic curves focus on the output of the transistor, but we can also consider the behavior of the input. In the active region the base is a forward biased diode, and so V B would be about .7 V, typical for a conducting Si diode. DATA SHEET PRODUCT DEFINITIONS STATUS3 STATUS4 Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary ... Buy Diodes Inc B130LAW-7-F in Avnet Europe. View Substitutes & Alternatives along with datasheets, stock, pricing and search for other Schottky Rectifier Diodes products. the end of the data sheet. Logic Diagram (Positive Logic) 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.

Diodes B130LAW-7-F Inventory, Pricing, Datasheets from Authorized Distributors at ECIA. Instant results for Diodes B130LAW-7-F. ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current -7.0 A IDM @TC = 25°C Pulsed Drain Current -44 PD @TC = 25°C Maximum Power Dissipation 75 W Linear Derating Factor 0.60 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 207 mJ IAR Avalanche Current -11 A

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B130LAW-7-F Inventory, Pricing, Datasheets from Authorized Distributors at ECIA. Instant results for B130LAW-7-F. SS8550 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Electrical Characteristics Ta=25°C unless otherwise noted hFEClassification Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1.5 A 8 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. The datasheet for the 7 seg suggests 2.25 V drop and 20mA. With that said, the board that I am using outputs ~3.3V and about 3mA. I already have a bunch of these NPN transistors, just need some advice on how to connect it. 2004 Feb 03 2 NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 FEATURES •Collector current capability IC = 200 mA •Collector-emitter voltage VCEO = 40 V.

B130law 7 f datasheet 2n3904

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2N3904 Datasheet(HTML) 2 Page - ON Semiconductor: zoom in zoom out. 2 / 7 page 2004 Jan 12 8 NXP Semiconductors Product data sheet NPN switching transistor PMBT3904 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. R09DS0021EJ0300 Rev.3.00 Page 1 of 7 Jun 28, 2011 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. BC846/BC847/BC848 SMD General Purpose Transistor (NPN) www.taitroncomponents.com Page 2 of 8 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Typ. Max. Unit Conditions - - 15 nA VCB=30V, IE=0 ICBO Collector-Base Cut-off Current - - 5.0 µA VCB=30V, IE=0, TJ=150° C BC846/7/8, Suffix ‘A’ - 90 -